impurity profile
英 [ɪmˈpjʊərəti ˈprəʊfaɪl]
美 [ɪmˈpjʊrəti ˈproʊfaɪl]
网络 杂质谱; 杂质分析; 杂质概况; 杂质档案; 杂质分布
双语例句
- Orthogonal analytical approaches for impurity investigations to provide a complete understanding of a drug substance impurity profile and to aid chemical process development are described.
作者详细阐述了使用正交方法来全面了解药物相关物质的性质、以及帮助改进化学制备过程。 - It is a compound whose name, chemical structure, chemical and physical characteristics and properties, and impurity profile are well defined in the chemical literature ( see Glossary).
名称，化学结构，化学和物理特征和性质，和杂质情况在化学文献中得到很好的确定（见术语） - Process validation should confirm that the impurity profile for each API is within the limits specified.
工艺验证需正式每一批的杂质概况在具体的限度内。 - Such carryover should not result in the carryover of degradants or microbial contamination that may adversely alter the established API impurity profile.
此类带入不得引入降解物或微生物的污染，不得给原料药的杂质状况带来不量影响。 - An impurity profile describing the identified and unidentified impurities present in a typical batch produced by a specific controlled production process should normally be established for each API.
每一种原料药都应当有杂质概况，描述用一特别控制的生产工艺生产出的典型批号中存在的已确定和未确定的杂质。 - Quality assessment of starting materials from multiple sources and the impact of starting material impurities on the impurity profile of the drug substance are discussed with illustrative examples.
从多重来源的起始原料的定量分析和起始原料中的相关物质对药物中的相关物质的影响在本文中也通过具体例子进行了讨论。 - The impurity profile is normally dependent upon the production process and origin of the API.
杂质概况一般与原料药的生产工艺和起源有关。 - Procedures should provide for comparing the impurity profile of each reworked batch against batches manufactured by the established process.
应当有程序对每一重新加工过的批号与用规定的工艺生产的批号进行杂质概况的比较。 - An investigation of the impurity profile of the 4mm band silicon avalanche diode by means of the Schottky barrier characteristics
利用肖特基势垒特性研究4mm波段硅雪崩二极管的杂质分布 - Directly Plotting Impurity Profile of Semiconductor
半导体杂质分布曲线的直接描绘 - Calculation of Impurity Concentration Profile for Transient Annealing Process
瞬态退火过程中离子注入层杂质浓度分布的计算 - Methods The current HPLC methods in different pharmacopoeia and HPLC-MS analysis were performed to study on the complete impurity profile of Cefotaxime Sodium.
方法采用现版的不同药典的相关HPLC法及HPLC-MS分析，研究头孢噻肟钠的完全杂质谱。 - Diffusion growth model of doping impurity longitudinal profile in the grown materials
生长材料中掺杂杂质纵向分布的扩散生长理论 - Impurity profile of InP material has been studied and the measuring system is proved to be trustworthy.
研究了InP掺杂浓度分布，确认测量系统的可信性。 - Measurements of Gold Impurity Profile in Silicon
硅中金杂质分布的测量 - The surface morphology, growth rate, residual impurity level, electronic mobility deep impurity level and carrier concentration profile for low temperature epitaxy are discussed and compared with those for high temperature epitaxy.
对低温外延时的表面形貌，生长速率，剩余杂质浓度，电子迁移率，深能级杂质和纵向浓度分布进行了讨论，并与高温外延进行了比较。 - In this paper, investigation is carried cut on the impurity concentra-tion and profile of Cd diffusion in InSb by using C-V method, so as to provide a new test technique for the determination of impurity concentration and profile for shallow junction.
本文研究了C-V法测试Cd在InSb中扩散层的杂质浓度及其分布，为浅结杂质分布的确定提供了一个新的方法。 - The impurity profile in the diffused p-type region has been assumed to be Gaussian in the present paper.
本文假设扩散p型区的杂质分布为高斯分布，并与前人的指数杂质分布结果作了比较。 - Low energy argon ion milling combined with SIMS measurment is used to study the possibility of high resolution impurity profile.
300eV的低能氩离子刻蚀与SIMS技术相结合，研究了高深度分辨率杂质深度分布测定的可能性。 - Impurity Ga and the carrier concentration distribution are measured by SIMS and spreading resistance profile ( SRP) spectroscopy individually.
杂质Ga及载流子浓度在Si02-Si界面附近的动态分布分别采用二次离子质谱仪（SIMS）和扩展电阻（SRP）进行测量。 - In this paper, the impurity profile of the 4 mm band silicon avalanche diode is studied by means of the characteristics of the Schottky barrier.
本文研究了4mm波段硅雪崩二极管剖面的杂质浓度分布。测量并讨论了研制器件的外延层杂质分布特性，和器件杂质分布及其对器件性能的影响。 - Measuring C-V relationship of a Schottky barrier formed on the surface of a semiconductor and analogously computing the measured results, the impurity profile was recorded on the X-Y plotter.
测量在半导体表面形成的肖特基势垒的C～V关系，并对测量结果进行模拟运算，最后用X-Y记录仪描绘杂质分布曲线。 - The Effect of Interface States on the Measurement of the Impurity Profile in p/ p~+ Epitaxial Layer by a High Frequency C-V Method
界面态对p/p~+外延片高频C&V法测定杂质纵向浓度分布的影响 - A special diffusion process for excellent P and N type impurity profile simultaneously has been found and put into production.
采用特殊扩散掺杂工艺，不仅可一次性完成P，N型掺杂、而且具有优良的杂质分布及其均匀性。 - Test on Impurity Concentration and Profile of Cd Diffusion in InSb By Using C-V Method
用C-V法测试Cd在InSb中扩散层的杂质浓度及其分布 - Electrochemical C-V Method for Determination of Semiconductor Impurity Profile
电化学C-V法测量半导体材料载流子浓度分布